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Product Specification
www.jmnic.com
Silicon PNP Power Transistors
2SA1306 2SA1306A 2SA1306B
DESCRIPTION With TO-220Fa package Complement to type 2SC3298,2SC3298A,2SC3298B APPLICATIONS Power amplifier applications Driver stage amplifier applications
PINNING PIN 1 2 3 DESCRIPTION Emitter Collector Base
Absolute maximum ratings(Ta=25ae )
SYMBOL PARAMETER 2SA1306 VCBO Collector-base voltage 2SA1306A 2SA1306B 2SA1306 VCEO Collector-emitter voltage 2SA1306A 2SA1306B VEBO IC IB PC Tj Tstg Emitter-base voltage Collector current Base current Collector power dissipation Junction temperature Storage temperature TC=25ae Open collector Open base Open emitter CONDITIONS VALUE -160 -180 -200 -160 -180 -200 -5 -1.5 -0.15 20 150 -55~150 ae ae V A A W V V UNIT
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Product Specification
www.jmnic.com
Silicon PNP Power Transistors
CHARACTERISTICS
Tj=25ae unless otherwise specified PARAMETER 2SA1306 V(BR)CEO Collector-emitter breakdown voltage 2SA1306A 2SA1306B VCEsat VBE ICBO IEBO hFE Cob fT Collector-emitter saturation voltage Base-emitter voltage Collector cut-off current Emitter cut-off current DC current gain Output capacitance Transition frequency
2SA1306 2SA1306A 2SA1306B
SYMBOL
CONDITIONS
MIN -160
TYP.
MAX
UNIT
IC=10mA , IB=0
-180 -200
V
IC=-0.5A, IB=-50mA IC=-0.5A ,VCE=-5V VCB=-160V, IE=0 VEB=-5V; IC=0 IC=-0.1A ; VCE=-5V IE=0 ; VCB=-10V,f=1MHz IC=-0.1A ; VCE=-10V 70 30 100
-1.5 -1.0 -1.0 -1.0 240 |I |I
V V A A
pF MHz
hFE Classifications O 70-140 Y 120-240
JMnic
Product Specification
www.jmnic.com
Silicon PNP Power Transistors
PACKAGE OUTLINE
2SA1306 2SA1306A 2SA1306B
Fig.2 Outline dimensions (unindicated tolerance:A
0.15 mm)
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